Charge Trapping in SiO2/HfO2 Dual Layer Gate Stacks

Charge trapping in SiO2/HfO2 dual layer gate stacks with poly-Si electrodes is reviewed. Results obtained with different measurement techniques are compared and it is shown that pulsed measurement techniques, such as charge pumping (using amplitude sweeps) and the pulsed
Id-Vg technique, are useful to quantify the fast transient charging effects in these gate stacks. A trapping model is proposed to explain the observed transient charging behavior.

By: E. Cartier, A. Kerber, L. Pantisano

Published in: RC23080 in 2004


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