High Frequency Response in Carbon Nanotube Field-Effect Transistors

Copyright © (2004) by IEEE. Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distrubuted for profit. To copy otherwise, to republish, to post on servers, or to redistribute to lists, requires prior specific permission and/or a fee.

We report electrical measurements of the RF response of carbon nanotube field-effect transistors (CNFETs). The very low current drive of CNFETs makes conventional high frequency measurements difficult. To overcome this problem, we have used a novel approach to easily measure the response up to 250 MHz in non-optimized experimental conditions. We observe a clear response of our CNFETs with no deterioration in signal up to at least 250 MHz, which is the limit for our present configuration.

By: David J. Frank, Joerg Apenzeller

Published in: IEEE Electron Device Letters, volume 25, (no 1), pages 34-36 in 2004


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