Does Circulation in Individual Current States Survive in the Total Current Density?

We describe the two-dimensional simulation of a bent resonant tunneling diode structure which displays vortices in its total current density pattern over a range of applied bias. In contrast, a double gate n-MOSFET is shown where such circulation exists in subband individual states but does not survive in the total current density solution. Both devices are simulated assuming ballistic quantum transport in Si at 300K.

By: Steven E. Laux, Arvind Kumar, Massimo V. Fischetti

Published in: RC22798 in 2003


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