Experimental and Theoretical Explanation for the Orientation Dependence Gate-Induced Drain Leakage in Scaled MOSFETs

In this work we provide a compelling experimental and theoretical explanation for the low GIDL currents that occur due to band to band (b2b) tunneling in MOSFETs with <100> (45º rotated) channel direction compared to <110> oriented devices. In measurements on bulk Si wafers, we clearly show a factor of ~3x decrease in tunneling current for (001) wafers compared to (011) or (111) orientations supporting the GIDL observations. Rigorous calculations of complex band structure for the three directions reveal that the light hole band dominates the tunneling action integral, supporting our measurements and accounting for the GIDL data.

By: P. M. Solomon; S. E. Laux; L. Shi; J. Cai; W. Haensch

Published in: RC24724 in 2009


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to reports@us.ibm.com .