Field Effect Transistors with SrHfO3 as Gate Oxide

Copyright © (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

We demonstrate that the compound SrHfO3 grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate n- and p-metal-oxide semiconductor field-effect transistors (MOSFET) with equivalent oxide thickness (EOT) below 1 nm. The electrical properties on capacitors and transistors show low gate leakage, good capacitance and I-V output characteristics. The lower electron and hole mobilities, which are strongly limited by charge trapping, nevertheless fit well with the general trend of channel mobility reduction with decreasing EOT.

By: Christophe P. Rossel; Bogdan Mereu; Chiara Marchiori; Daniele Caimi; Marilyne Sousa Petit; Alexandre Guiller; Heinz Siegwart; Roland Germann; Jean-Pierre Locquet; Jean Fompeyrine; David J. Webb; Ch. Dieker; Jin Won Seo

Published in: Applied Physics Letters, volume 89, (no 5), pages 053506-1 in 2006

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