Low-energy proton-induced single event upsets in 65 nm Silicon-on-Insulator Latches and Memory Cells

Experimental data are presented showing that low energy (< 2 MeV) proton irradiation can upset exploratory 65nm Silicon-On-Insulator (SOI) circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism.

By: Kenneth P. Rodbell; Michael S. Gordon; David F. Heidel; Henry H. K. Tang; Cristina Plettner; Phil Oldiges

Published in: RC24175 in 2007


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to reports@us.ibm.com .