Polarization-Independent Photo-Detectors with Enhanced Responsivity in a Standard SOI CMOS Process

Copyright © (2009) by IEEE. Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distrubuted for profit. To copy otherwise, to republish, to post on servers, or to redistribute to lists, requires prior specific permission and/or a fee.

A polarization-independent photo-detector device is demonstrated that can be combined with electronic integrated circuits on a single chip. The photo-detector device is fully compatible with the standard silicon-on-insulator (SOI) CMOS (complementary metal-oxide-semiconductor) process without requiring process modification or post-processing.
Keywords: Stoferle, Stoeferle, Pfluger, Pflueger

By: N. Moll, T. Morf, M. Fertig, T. Stöferle, B. Trauter, R. F. Mahrt, J. Weiss, T. Pflüger, and K.-H. Brenner

Published in: IEEE Journal of Lightwave Technology, volume 27, (no 21), pages 4892-4896 in 2009


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