Epitaxially Induced Defects in Sr- and O-Doped La(2)CuO(4) Thin Films Grown by MBE: Implications for Transport Properties

In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-Tc thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.

By: Jean-Pierre Locquet and Erica J. Williams

Published in: Acta Physica Polonica. Section A, volume 92, (no 1), pages 69-83 in 1997

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