A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance

We demonstrate a scaled replacement-metal-gate InGaAs-on-Insulator n-FinFET on Si with LG = 13 nm and record ION of 249 μA/μm at fixed IOFF = 100 nA/μm and VD = 0.5 V. A subthreshold swing in saturation of 89 mV/dec and a Ron of 355 Ω·μm is also achieved. We further investigate the transport mechanisms at play in order to shed light on the contribution from short-channel effects and carrier generation and recombination mechanisms on SS and IOFF, at such a short gate length, using calibrated full 3D and simplified 2D TCAD simulations.

By: H. Hahn, V. Deshpande, E. Caruso, S. Sant, E. O’Connor, Y. Baumgartner, M. Sousa, D. Caimi, A. Olziersky, P. Palestri, L. Selmi, A. Schenk and L. Czornomaz

Published in: 2017 IEEE International Electron Devices Meeting (IEDM 2017) , IEEE, p.10.1109/IEDM.2017.8268410 in 2017


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