Conductance Measurements on Pb Centres at the (111) Si:SiO2 Interface

Copyright © (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

The electrical properties of the Pb centre have been measured using the conductance technique over the temperature range 130K to 290K. A high concentration of Pb centres were created by vacuum annealing of 28nm thick thermal oxides on (111) silicon surfaces. Fitting the conductance peak allowed the contribution of the (0/-) Pb level to be separated from the 'U' shaped background states. The (0/-) peak in the density of states was found to be asymmetrical with a broad shoulder on the conduction band side. The Pb levels were found to show a capture cross-section which fell towards the band edges and which could be fitted by assuming an activated cross-section with an activation energy which increased towards the band edges. By contrast, the background states showed a cross-section which was temperature and band bending independent.

By: M. J. Uren (Defence Research Agency, UK), J. H. Stathis and E. Cartier

Published in: Journal of Applied Physics, volume 80, (no 7), pages 3615-22 in 1996

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