Transport Models for Advance Device Simulation - Truth or Consequences?

An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n+-n-n+ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast.

By: S. E. Laux and M. V. Fischetti

Published in: RC20130 in 1995


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