Gate Oxide Reliability for Nano-Scale CMOS

The reliability of the gate oxide in microelectronics, i.e., the ability of a thin film of this material to retain its excellent dielectric properties while subjected to high electric fields, has been a perennial concern over the last 40-45 years. Two dominant gate oxide failure mechanisms, dielectric breakdown and the negative bias instability, have continued to cause concern as MOSFET devices have scaled to nanometer dimensions.

By: James H. Stathis

Published in: Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Piscataway, NJ, , IEEE. , p.127-30 in 2005

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