Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP

III-V laser integration on Si is seen as a promising path to overcome the current interconnect bottleneck in computing. Therefore, III-V lasers need to be integrated with a CMOS-compatible process flow. Moreover, parasitic elements of the lasers need to be minimized while preventing trade-offs to the lasing action (i.e. doping level in the 10^18 cm^3). One such parasitic element is the n-type ohmic contact on moderately-doped n-InP. A detailed study of Au-free contacts on n-InP including structural analysis has not yet been performed. To fill this gap, we will comprehensively report on various metal contacts on n-InP that reach a record-low median specific contact resistivity of 6 x 10^-8 Omega cm^2 and on contacts that show very shallow alloying behavior while still offering a specific contact resistivity in the very low 10^-7 Omega cm^2 range.

By: Herwig Hahn, Marilyne Sousa, Lukas Czornomaz

Published in: Journal of Physics. D. Applied Physics, volume 503, (no 3), pages 235102 in 2017


This Research Report is available. This report has been submitted for publication outside of IBM and will probably be copyrighted if accepted for publication. It has been issued as a Research Report for early dissemination of its contents. In view of the transfer of copyright to the outside publisher, its distribution outside of IBM prior to publication should be limited to peer communications and specific requests. After outside publication, requests should be filled only by reprints or legally obtained copies of the article (e.g., payment of royalties). I have read and understand this notice and am a member of the scientific community outside or inside of IBM seeking a single copy only.


Questions about this service can be mailed to reports@us.ibm.com .