Dynamic Internal Testing of CMOS Circuits Using Hot Luminescence

Copyright [©] (1997) by IEEE. Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distrubuted for profit. To copy otherwise, to republish, to post on servers, or to redistribute to lists, requires prior specific permission and/or a fee.

Subnanosecond pulses of hot electron luminescence are shown to be generated coincident with logic state switching of individual devices in CMOS circuits. These pulses are used to directly observe 90 psec gate delays in a ring oscillator as well as the logic switching and gate delays of a counter. By use of a detector with both space- and time-resolution, the dynamics of all the gates of the circuit are simultaneously measured. This noninvasive technique can be extended to smaller device size, as well as probing from the backside of the wafer. The optical emission may probide an alternative to electron beam testing for measuring the dynamics of high speed CMOS circuits.

By: J. A. Kash and J. C. Tsang

Published in: IEEE Electron Device Letters, volume 18, (no 7), pages 330-2 in 1997

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